IndiumV3, Main, Repository, bibRecord, 001597

Room temperature inductively coupled plasma etching of InAs/InSb in BCl3/Cl2/Ar

Identifieur interne : 001597 ( Main/Repository ); précédent : 001596; suivant : 001598

Room temperature inductively coupled plasma etching of InAs/InSb in BCl3/Cl2/Ar

Auteurs : RBID : Pascal:12-0373115

Descripteurs français

Pascal (Inist)
- Température ambiante, Plasma couplé inductivement, Gravure plasma, Vitesse gravure, Morphologie surface, Structure surface, Optimisation, Anisotropie, Surface lisse, Rugosité, Polissage, Pastille électronique, Masquage, Fabrication microélectronique, Antimoniure d'indium, Semiconducteur III-V, 52, 8540H, InSb.

English descriptors

KwdEn :
- Anisotropy, Etching rate, III-V semiconductors, Indium antimonides, Inductively coupled plasma, Masking, Microelectronic fabrication, Optimization, Plasma etching, Polishing, Room temperature, Roughness, Smooth surface, Surface morphology, Surface structure, Wafer.

Abstract

Inductively coupled plasma (ICP) etching of InAs and InSb at room temperature has been investigated using BCl₃/Cl₂/Ar plasma. Specifically, the etch rate and post-etching surface morphology were investigated as functions of the gas composition, ICP power, process pressure, and RF chuck power. An optimized process has been developed, yielding anisotropic etching and very smooth surfaces with roughnesses of 0.25 nm for InAs, and 0.57 nm for InSb, which is comparable with the surface of epi-ready polished wafers. The process provides moderate etching rates of 820 A/min for InAs and 2800 A/min for InSb, and the micro-masking effect is largely avoided.

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Pascal:12-0373115

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Room temperature inductively coupled plasma etching of InAs/InSb in BCl<sub>3</sub>
/Cl<sub>2</sub>
/Ar</title>
<author><name>JIAN SUN</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Physical Sciences and Engineering Division, King Abdullah University of Science and Technology</s1>
<s2>Thuwal 23955-6900</s2>
<s3>SAU</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
</inist:fA14>
<country>Arabie saoudite</country>
<wicri:noRegion>Thuwal 23955-6900</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Kosel, J Rgen" uniqKey="Kosel J">J Rgen Kosel</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Physical Sciences and Engineering Division, King Abdullah University of Science and Technology</s1>
<s2>Thuwal 23955-6900</s2>
<s3>SAU</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
</inist:fA14>
<country>Arabie saoudite</country>
<wicri:noRegion>Thuwal 23955-6900</wicri:noRegion>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">12-0373115</idno>
<date when="2012">2012</date>
<idno type="stanalyst">PASCAL 12-0373115 INIST</idno>
<idno type="RBID">Pascal:12-0373115</idno>
<idno type="wicri:Area/Main/Corpus">001816</idno>
<idno type="wicri:Area/Main/Repository">001597</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">0167-9317</idno>
<title level="j" type="abbreviated">Microelectron. eng.</title>
<title level="j" type="main">Microelectronic engineering</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Anisotropy</term>
<term>Etching rate</term>
<term>III-V semiconductors</term>
<term>Indium antimonides</term>
<term>Inductively coupled plasma</term>
<term>Masking</term>
<term>Microelectronic fabrication</term>
<term>Optimization</term>
<term>Plasma etching</term>
<term>Polishing</term>
<term>Room temperature</term>
<term>Roughness</term>
<term>Smooth surface</term>
<term>Surface morphology</term>
<term>Surface structure</term>
<term>Wafer</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Température ambiante</term>
<term>Plasma couplé inductivement</term>
<term>Gravure plasma</term>
<term>Vitesse gravure</term>
<term>Morphologie surface</term>
<term>Structure surface</term>
<term>Optimisation</term>
<term>Anisotropie</term>
<term>Surface lisse</term>
<term>Rugosité</term>
<term>Polissage</term>
<term>Pastille électronique</term>
<term>Masquage</term>
<term>Fabrication microélectronique</term>
<term>Antimoniure d'indium</term>
<term>Semiconducteur III-V</term>
<term>52</term>
<term>8540H</term>
<term>InSb</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">Inductively coupled plasma (ICP) etching of InAs and InSb at room temperature has been investigated using BCl<sub>3</sub>
/Cl<sub>2</sub>
/Ar plasma. Specifically, the etch rate and post-etching surface morphology were investigated as functions of the gas composition, ICP power, process pressure, and RF chuck power. An optimized process has been developed, yielding anisotropic etching and very smooth surfaces with roughnesses of 0.25 nm for InAs, and 0.57 nm for InSb, which is comparable with the surface of epi-ready polished wafers. The process provides moderate etching rates of 820 A/min for InAs and 2800 A/min for InSb, and the micro-masking effect is largely avoided.</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0167-9317</s0>
</fA01>
<fA02 i1="01"><s0>MIENEF</s0>
</fA02>
<fA03 i2="1"><s0>Microelectron. eng.</s0>
</fA03>
<fA05><s2>98</s2>
</fA05>
<fA08 i1="01" i2="1" l="ENG"><s1>Room temperature inductively coupled plasma etching of InAs/InSb in BCl<sub>3</sub>
/Cl<sub>2</sub>
/Ar</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>JIAN SUN</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>KOSEL (Jürgen)</s1>
</fA11>
<fA14 i1="01"><s1>Physical Sciences and Engineering Division, King Abdullah University of Science and Technology</s1>
<s2>Thuwal 23955-6900</s2>
<s3>SAU</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
</fA14>
<fA20><s1>222-225</s1>
</fA20>
<fA21><s1>2012</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>20003</s2>
<s5>354000508155480450</s5>
</fA43>
<fA44><s0>0000</s0>
<s1>© 2012 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45><s0>15 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>12-0373115</s0>
</fA47>
<fA60><s1>P</s1>
<s2>C</s2>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Microelectronic engineering</s0>
</fA64>
<fA66 i1="01"><s0>NLD</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>Inductively coupled plasma (ICP) etching of InAs and InSb at room temperature has been investigated using BCl<sub>3</sub>
/Cl<sub>2</sub>
/Ar plasma. Specifically, the etch rate and post-etching surface morphology were investigated as functions of the gas composition, ICP power, process pressure, and RF chuck power. An optimized process has been developed, yielding anisotropic etching and very smooth surfaces with roughnesses of 0.25 nm for InAs, and 0.57 nm for InSb, which is comparable with the surface of epi-ready polished wafers. The process provides moderate etching rates of 820 A/min for InAs and 2800 A/min for InSb, and the micro-masking effect is largely avoided.</s0>
</fC01>
<fC02 i1="01" i2="X"><s0>001D03F17</s0>
</fC02>
<fC02 i1="02" i2="3"><s0>001B80A65</s0>
</fC02>
<fC02 i1="03" i2="3"><s0>001B60H35B</s0>
</fC02>
<fC02 i1="04" i2="3"><s0>001B50B</s0>
</fC02>
<fC03 i1="01" i2="X" l="FRE"><s0>Température ambiante</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="X" l="ENG"><s0>Room temperature</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="X" l="SPA"><s0>Temperatura ambiente</s0>
<s5>01</s5>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>Plasma couplé inductivement</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="3" l="ENG"><s0>Inductively coupled plasma</s0>
<s5>02</s5>
</fC03>
<fC03 i1="03" i2="X" l="FRE"><s0>Gravure plasma</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="X" l="ENG"><s0>Plasma etching</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="X" l="SPA"><s0>Grabado plasma</s0>
<s5>03</s5>
</fC03>
<fC03 i1="04" i2="X" l="FRE"><s0>Vitesse gravure</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="X" l="ENG"><s0>Etching rate</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="X" l="SPA"><s0>Velocidad grabado</s0>
<s5>04</s5>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>Morphologie surface</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="3" l="ENG"><s0>Surface morphology</s0>
<s5>05</s5>
</fC03>
<fC03 i1="06" i2="X" l="FRE"><s0>Structure surface</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="X" l="ENG"><s0>Surface structure</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="X" l="SPA"><s0>Estructura superficie</s0>
<s5>06</s5>
</fC03>
<fC03 i1="07" i2="X" l="FRE"><s0>Optimisation</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="X" l="ENG"><s0>Optimization</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="X" l="SPA"><s0>Optimización</s0>
<s5>07</s5>
</fC03>
<fC03 i1="08" i2="X" l="FRE"><s0>Anisotropie</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="X" l="ENG"><s0>Anisotropy</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="X" l="SPA"><s0>Anisotropía</s0>
<s5>08</s5>
</fC03>
<fC03 i1="09" i2="X" l="FRE"><s0>Surface lisse</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="X" l="ENG"><s0>Smooth surface</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="X" l="SPA"><s0>Superficie lisa</s0>
<s5>09</s5>
</fC03>
<fC03 i1="10" i2="X" l="FRE"><s0>Rugosité</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="X" l="ENG"><s0>Roughness</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="X" l="SPA"><s0>Rugosidad</s0>
<s5>10</s5>
</fC03>
<fC03 i1="11" i2="X" l="FRE"><s0>Polissage</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="X" l="ENG"><s0>Polishing</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="X" l="SPA"><s0>Pulimiento</s0>
<s5>11</s5>
</fC03>
<fC03 i1="12" i2="X" l="FRE"><s0>Pastille électronique</s0>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="X" l="ENG"><s0>Wafer</s0>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="X" l="SPA"><s0>Pastilla electrónica</s0>
<s5>12</s5>
</fC03>
<fC03 i1="13" i2="X" l="FRE"><s0>Masquage</s0>
<s5>13</s5>
</fC03>
<fC03 i1="13" i2="X" l="ENG"><s0>Masking</s0>
<s5>13</s5>
</fC03>
<fC03 i1="13" i2="X" l="SPA"><s0>Enmascaramiento</s0>
<s5>13</s5>
</fC03>
<fC03 i1="14" i2="X" l="FRE"><s0>Fabrication microélectronique</s0>
<s5>14</s5>
</fC03>
<fC03 i1="14" i2="X" l="ENG"><s0>Microelectronic fabrication</s0>
<s5>14</s5>
</fC03>
<fC03 i1="14" i2="X" l="SPA"><s0>Fabricación microeléctrica</s0>
<s5>14</s5>
</fC03>
<fC03 i1="15" i2="3" l="FRE"><s0>Antimoniure d'indium</s0>
<s2>NK</s2>
<s5>22</s5>
</fC03>
<fC03 i1="15" i2="3" l="ENG"><s0>Indium antimonides</s0>
<s2>NK</s2>
<s5>22</s5>
</fC03>
<fC03 i1="16" i2="3" l="FRE"><s0>Semiconducteur III-V</s0>
<s5>23</s5>
</fC03>
<fC03 i1="16" i2="3" l="ENG"><s0>III-V semiconductors</s0>
<s5>23</s5>
</fC03>
<fC03 i1="17" i2="X" l="FRE"><s0>52</s0>
<s4>INC</s4>
<s5>56</s5>
</fC03>
<fC03 i1="18" i2="X" l="FRE"><s0>8540H</s0>
<s4>INC</s4>
<s5>57</s5>
</fC03>
<fC03 i1="19" i2="X" l="FRE"><s0>InSb</s0>
<s4>INC</s4>
<s5>82</s5>
</fC03>
<fC07 i1="01" i2="X" l="FRE"><s0>Composé III-V</s0>
<s5>15</s5>
</fC07>
<fC07 i1="01" i2="X" l="ENG"><s0>III-V compound</s0>
<s5>15</s5>
</fC07>
<fC07 i1="01" i2="X" l="SPA"><s0>Compuesto III-V</s0>
<s5>15</s5>
</fC07>
<fN21><s1>289</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
</fN44>
<fN82><s1>OTO</s1>
</fN82>
</pA>
<pR><fA30 i1="01" i2="1" l="ENG"><s1>International Conference on Micro- and Nano-Engineering (MNE)</s1>
<s2>37</s2>
<s3>Berlin DEU</s3>
<s4>2011-09-19</s4>
</fA30>
</pR>
</standard>
</inist>
</record>

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Room temperature inductively coupled plasma etching of InAs/InSb in BCl3/Cl2/Ar

Room temperature inductively coupled plasma etching of InAs/InSb in BCl3/Cl2/Ar

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri